Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11015804 | Journal of Science: Advanced Materials and Devices | 2018 | 16 Pages |
Abstract
Bottom gate, top contact Organic Field Effect Transistors (OFETs) were fabricated using copper phthalocyanine (CuPc) as an active layer. The electrical properties of OFETs fabricated with CuPc annealed at different annealing temperatures and different channel length to width (L/W) ratios were studied. The transfer characteristics of the devices appear to improve with annealing temperature of CuPc and increasing L/W ratios of the devices. Upon annealing, the field effect mobility increased from 0.03 ± 0.004 cm2/V to 1.3 ± 0.02 cm2/V. Similarly, the interface state density reduced from 5.14 ± 0.39 Ã 1011 cmâ2eVâ1 for the device fabricated using as deposited CuPc, to 2.41 ± 0.05 Ã 1011 cmâ2eVâ1 for the device with CuPc annealed at 80 °C. The on/off current ratio increased from 102 for the as-deposited device, to 105 for the device with CuPc annealed at 80 °C. The dependence of the subthreshold swing on the L/W ratio was also investigated.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Lekshmi Vijayan, Anna Thomas, K. Shreekrishna Kumar, K.B. Jinesh,