Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11015810 | Journal of Science: Advanced Materials and Devices | 2018 | 5 Pages |
Abstract
We experimentally investigate the carrier transport in back-gated graphene ribbons. The ribbons are monolayer graphene formed by the chemical vapor deposition process and transferred on the SiO2/Si substrate. Electrical measurements show that two categories of electrical behavior are distinguished, respectively, linear and nonlinear. The in-situ Raman characterization along the ribbon area highlights interesting results for the 2D peaks shift. The Raman shift variation corresponding to the position of the 2D peaks between all measured spectra extends from 2697Â cmâ1 to 2700Â cmâ1 for devices exhibiting a linear behavior. While, for the devices exhibiting a nonlinear behavior, the variation range is more important, from 2686Â cmâ1 to 2704Â cmâ1. These results reveal that the carrier density is non-uniform and localized in term of concentration over the ribbon area, and the electrical behavior appears to be strongly related to the graphene local carrier density.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
Rachid Fates, Jean-Pierre Raskin,