Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11019661 | Physica B: Condensed Matter | 2019 | 22 Pages |
Abstract
First principles calculations have been adopted to study the electronic properties of QTD β-Ga2O3 modulated by vacancy and doping. The calculated results indicate the band gaps of QTD β-Ga2O3 are not largely decreased (â¼0.36â¯eV) compared with its bulk form. By introducing Ga and O vacancies, the p-type and n-type QTD β-Ga2O3 can be obtained, respectively. The band gap of the system with O vacancy decrease to 0.7â¯eV due to the occurrence of the band gap states. All the substitutional dopants induce the system act as n-type doping. Cr, Fe, N and Si atoms create flat band states in the vicinity of the Fermi level, which decrease the band gap of the system. More promising n-type doping can be achieved by placing metal atoms on the surface of QTD β-Ga2O3. The decreased band gap of Sn adsorption can efficiently expand the range of the liner optical absorption of QTD β-Ga2O3.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jie Sun, Jiancai Leng,