Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11019673 | Journal of Crystal Growth | 2018 | 4 Pages |
Abstract
The homoepitaxial growth of 4H-SiC epilayers were conducted by hot-wall vertical chemical vapor deposition (CVD). The dependence of silicon droplets on the growth temperature on 4° off-axis 4H-SiC substrates and its mechanism have been investigated, which were characterized by Nomarski optical microscope, scanning electronic microscope (SEM) and micro-Raman spectrometer. The results indicated that the silicon droplets were highly crystalline. It was also found that the silicon droplet generation could be suppressed by increasing the growth temperature, though the growth rate declined slightly.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Niu Yingxi, Tang Xiaoyan, Sang Ling, Li Yun, Kong Lingyi, Tian Liang, Tian Honglin, Wu Pengfei, Jia Renxu, Yang Fei, Wu Junmin, Pan Yan, Zhang Yuming,