Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11020054 | Journal of Alloys and Compounds | 2019 | 25 Pages |
Abstract
The CuxTi1-xO2 films (xâ¯=â¯0.05, 0.10 and 0.15) with various Cu dopants were prepared by sol-gel spin coating technique on a glass substrate and Si wafer in order to determine their optical and photodiode behaviors. Surface topology of thin films was investigated by Atomic Force Microscopy. The optical properties and dispersion parameters have been calculated completely for the samples by using the single term Sellmeier dispersion relation and Wemple-DiDomenico single oscillator model. Photodiode properties were studied by current-voltage IâV characteristics of Al/n-Si/CuxTi1-xO2/Al at room temperature under various illumination intensities. According to the results, the devices have good rectifying, photoresponse and photodiode properties. The electrical behaviors were characterized also by CâV and GâV measurements for various frequencies. The capacitance-voltage-frequency CâVâf measurements indicate that the capacitance of the devices depends on voltage and frequency. The results confirm that the various Cu doped TiO2 devices are the good candidate for photodiode and photodetector applications.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Murat Yıldırım,