| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 11020056 | Solid State Communications | 2019 | 17 Pages |
Abstract
Electrical behaviors of anatase TiO2 nanoparticles were investigated at high pressure. Resistive switching effect was observed at different pressures and enhanced with pressure. The I-V characteristic curves show stable resistive switching performance as a function of pressure and also indicate that the optimal properties appear below 21.4â¯GPa. The larger current at high pressure was obtained, which should be ascribed to the semiconductor-metallic transformation. The conductive mechanism was discussed and high pressure phase transitions play a key role in resistive switching behaviors.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Yanwei Huang, Jun Zhang,