Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11023511 | Optik - International Journal for Light and Electron Optics | 2019 | 20 Pages |
Abstract
This paper presents investigation on the effects of etching time towards broadband absorption enhancement in black silicon (b-Si) fabricated by silver-assisted chemical etching. The c-Si wafers are deposited with a thin silver (Ag) layer and annealed in a nitrogen (N2) atmosphere to form Ag nanoparticles (Ag NPs). The wafers are then etched in an aqueous solution of HF:H2O2:H2O at room temperature at different etching times to form the b-Si. All the b-Si wafers show rough surface morphology due to the presence of nanotextures. The b-Si exhibit wafers exhibit significantly lower broadband reflection compared to a planar c-Si reference. The c-Si wafer etched for 70âs demonstrates the lowest broadband reflection, with reflection of 3% at wavelength of 600ânm (i.e. absorption of 97%). This sample exhibits b-Si nanotextures with width of 50-100ânm and height of 300-400ânm. The enhanced broadband light absorption in the b-Si leads to maximum potential short-circuit current density (Jsc (max)) of 39.7âmA/cm2, or 51% enhancement compared to a planar c-Si reference, calculated for wavelength region of 300-1100ânm.
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Authors
Nur Afidah Md. Noor, Siti Khadijah Mohamad, Siti Sarah Hamil, Mutharasu Devarajan, Mohd Zamir Pakhuruddin,