Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11026326 | Journal of Crystal Growth | 2018 | 9 Pages |
Abstract
This work investigates defect formation and evolution associated with the deposition of GaP layers on precisely oriented Si(0â¯0â¯1) substrates. The GaP layers were grown with thicknesses ranging from â¼37â¯nm to â¼2 µm at a growth rate of 0.52â¯Î¼m/hr using molecular beam epitaxy (MBE). The crystallinity of thin (37-nm) MBE-grown GaP layers was also compared with thin GaP layers grown by migration-enhanced epitaxy (MEE). The MBE growth procedure was shown to postpone relaxation of the epitaxial GaP layers up to a thickness of â¼250â¯nm. Detailed analysis of high-resolution X-ray diffraction patterns and comparison with cross-sectional transmission electron micrographs clarified the defect formation mechanism. Thin GaP layers showed very low defect densities except for anti-phase boundaries, whereas substantial threading defects predominated in the thicker, noticeably relaxed structures.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Chaomin Zhang, Allison Boley, Nikolai Faleev, David J. Smith, Christiana B. Honsberg,