Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11029631 | Organic Electronics | 2018 | 7 Pages |
Abstract
This study suggests a design methodology for air-stable ambipolar materials such that the HOMO/LUMO level of the ambipolar material is 0.3-0.5â¯eV higher than the target value to compensate for an eventual upward shift that occurs when the device is exposed to ambient air. Based on the methodology, we demonstrate air-stable split-gate OTFTs that show balanced p/n characteristics after â¼120â¯h of air exposure.204
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Hocheon Yoo, Masahiro Nakano, Sungmin On, Hyungju Ahn, Han-Koo Lee, Kazuo Takimiya, Jae-Joon Kim,