| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 11031456 | Materials Science in Semiconductor Processing | 2019 | 4 Pages |
Abstract
An improved DRBL AlGaN/GaN HEMT (IDRBL HEMT) with high power added efficiency is proposed and its mechanism is studied by co-simulation of ADS and TCAD software. The barrier layer on both sides of the gate of the new structure has a recessed layer. The simulation results show that the optimized IDRBL HEMT has a large breakdown voltage, a small gate-source capacitance and a large power added efficiency. The maximum PAE obtained from IDRBL HEMT was 53.30%, while the PAE of DRBL HEMT was 36.02%. Therefore, the HEMT of the IDRBL structure has great application prospects in the microwave and radio frequency fields.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Hujun Jia, Shunwei Zhu, Mei Hu, Yibo Tong, Tao Li, Yintang Yang,