| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 11262917 | Nano Energy | 2018 | 20 Pages |
Abstract
Solution-processed Li-doped ZnO films with precisely tunable work function (from 4.15 to 3.85â¯eV) are used as insertion layers in n-Si/a-Si:H/Al stack, leading to great reduction of the contact resistivity and a high selectivity in electron extraction.227
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Authors
Zilei Wang, Yang Yang, Longfei Zhang, Hao Lin, Zhi Zhang, Dan Wang, Shanglong Peng, Deyan He, Jichun Ye, Pingqi Gao,