EXAFS and electrical studies of new narrow-gap semiconductors: InTe1−xSex and In1−xGaxTe

The local environment of Ga, Se and Tl atoms in InTe-based solid solutions was studied by EXAFS technique. It was shown that all investigated atoms are substitutional impurities, which enter the In(1), Te and In(2) positions in the InTe structure, respectively. The electrical measurements revealed that In1−xGaxTe and InTe1−xSex solid solutions become semiconductors at x>0.24 and >0.15, respectively.