Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11360866 | Journal of Physics and Chemistry of Solids | 2012 | 6 Pages |
Abstract
The local environment of Ga, Se and Tl atoms in InTe-based solid solutions was studied by EXAFS technique. It was shown that all investigated atoms are substitutional impurities, which enter the In(1), Te and In(2) positions in the InTe structure, respectively. The electrical measurements revealed that In1âxGaxTe and InTe1âxSex solid solutions become semiconductors at x>0.24 and >0.15, respectively.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A.I. Lebedev, A.V. Michurin, I.A. Sluchinskaya, V.N. Demin, I.H. Munro,