| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1141186 | Mathematics and Computers in Simulation | 2008 | 9 Pages |
Abstract
A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green’s function (NEGF) formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron–phonon coupling strength and phonon energy, on the device performance are analyzed.
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Authors
M. Pourfath, H. Kosina, S. Selberherr,