Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1194227 | International Journal of Mass Spectrometry | 2012 | 12 Pages |
The role of plasma-generated ions for plasma processing of substrates was investigated to develop a deeper understanding of the phenomena which occur at plasma–surface interfaces. Energy analyses were performed for nascent ions for a range of fluorocarbon (FC) plasma source gases, including CF4, C2F6, C3F8, C3F6, and hexafluoropropylene oxide (HFPO). Mean ion energies (
Graphical abstractFigure optionsDownload full-size imageDownload high-quality image (235 K)Download as PowerPoint slideHighlights► Nascent ions in fluorocarbon (FC) plasmas were identified and energy analyzed. ► Ion effects are mediated both by plasma parameters and the choice of precursor. ► Highly energetic ions induce CFx scatter at surfaces. ► Low energy plasma ions recombine in the gas phase to promote FC film growth. ► FC deposition rates are strongly influenced by gas-phase oligomer concentration.