Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1197066 | Journal of Analytical and Applied Pyrolysis | 2010 | 5 Pages |
Abstract
IR laser irradiation of an equimolar silane–germane mixture in Ar results in the decomposition of both compounds and allows chemical vapour deposition (CVD) of solid nanostructured Si/Ge film that was analyzed by FTIR and Raman spectroscopy, X-ray diffraction and electron microscopy. The film is deduced to be formed via coalescence/intermixing of extruded Si and Ge atoms and revealed as metastable and consisting of the crystalline d-c Ge and crystalline Si/Ge alloys embedded in an amorphous Si and Si/Ge phase. The reported IR laser CVD of the nanostructured Si/Ge film represents a simple way for synthesis of binary alloys from volatile hydride precursors.
Related Topics
Physical Sciences and Engineering
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Authors
Tomáš Křenek, Nataliya Murafa, Petr Bezdička, Jan Šubrt, Josef Pola,