Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
12039524 | Materials Letters | 2019 | 13 Pages |
Abstract
Ti-substituted CuGaS2 (Ti-CGS) thin film, a well candidate intermediate band (IB) material, has been successfully synthesized via a well synthetic route by alternate sputtering. The results revealed that the film have a compact morphology and are comprised of a crystalline chalcopyrite single phase Ti-CGS. Due to the presentation of Ti atoms, the IBs were introduced and additional sub-band-edge responses were directly observed in absorption spectroscopy. In the Ti-CGS thin film, except an intrinsic band-edge response observed at 510â¯nm ('A', 2.31â¯eV), two distinct sub-band-edge responses are observed at 856â¯nm ('B', 1.45â¯eV) and 1418â¯nm ('D', 0.87â¯eV). Besides, one weak sub-band-edge responses are found at 1102â¯nm ('C', 1.13â¯eV), which is in accord with theoretical prediction. The present report might provide a promising fabrication process for discovering the multiple IBs in the Ti-CGS film.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Wen-Liang Fan, Hai-Yan Yao, Yan-Lai Wang, Shi-Liang Ban,