| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1230231 | Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy | 2014 | 8 Pages |
•Zn dopedIn2O3 thin films deposited by spray pyrolysis technique using Indium acetate as precursor.•The properties of films characterized by XRD, SEM, AFM, PL and Photo acoustic measurements.•SEM and AFM analyses showed smooth surfaces and the surface roughness increased by Zn doping.•The optical band gap decreased from 3.62 to 3.28 eV with increasing Zn concentration.
In this work, highly transparent conducting un-doped and Zn-doped In2O3 thin films were prepared onto glass substrate using spray pyrolysis method. Structural, morphological, optical and electrical properties were characterized by using XRD, FT-IR, FT-Raman, SEM, AFM, UV–visible, PL and Hall Effect measurement techniques. X-ray diffraction analysis showed that the deposited films were polycrystalline with cubic structure having (2 2 2) as preferred orientation. SEM and AFM analyses showed smooth surfaces but the surface roughness of the films increased due to Zn doping. The average optical transmittance of the films was above 94% in the visible range. The optical band gap decreased from 3.62 to 3.28 eV with increasing Zn concentration. The photoluminescence spectra displayed violet-blue emission peaks at around 418–440 nm for all films. The electrical parameters like the resistivity, mobility and carrier concentration were found as 6.4 × 10−4 Ω cm, 168 cm2/Vs and 9.4 × 1020 cm−3, respectively for In2O3:Zn film deposited at 9 at.%. The present results showed that the obtained thin films could be used as an optoelectronic material.
Graphical abstractThe X-ray diffraction analysis showed that the deposited films were polycrystalline with cubic structure having (2 2 2) as preferred orientation. SEM and AFM analyses showed smooth surfaces but the surface roughness of the films increased due to Zn doping. The average optical transmittance of the films was above 90% in the visible range. The optical band gap decreased from 3.62 to 3.28 eV with increasing Zn concentration. The photoluminescence spectra displayed violet-blue emission peaks at around 418–440 nm for all films. The electrical parameters like the resistivity, mobility and carrier concentration were found as 6.4 × × 10−4 Ω cm, 168 cm2/Vs and 9.4 × 1020 cm−3, respectively for In2O3:Zn film deposited at 9 at.%. The present results showed that the obtained thin films could be used as an optoelectronic material.Figure optionsDownload full-size imageDownload as PowerPoint slide
