Sticking probability of CN(X2Σ+) radicals onto amorphous carbon nitride films formed from the decomposition of BrCN induced by the microwave discharge flow of Ar

► The sticking probability, s, of CN(X2Σ+) radicals onto amorphous carbon nitride films were evaluated under various experimental conditions based on the CN(A2Πi − X2Σ+) laser-induced fluorescence spectra. ► The s values were in the range of 7.6 × 10−2 to 23 × 10−2. ► The variation of s was interpreted in terms of the etching of the deposited films induced by the collision of Ar+ and of the hydrogen-abstraction reaction of CN(X2Σ+) radicals from the film surface.