Synthesis, characterization and dielectric properties of SnO2 thin films

•Synthesis of SnO2 thin films using SILAR method.•SnO2 thin films have been characterized by different spectroscopic techniques.•We focus on annealing effect upon refractive index, dielectric constants of SnO2 films.•Light effect on electrical resistivity of SnO2 films.

SnO2 thin films have been grown on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The annealing temperature effect on the structural, morphological, optical and electrical properties of SnO2 thin films has been investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies have showed that all the films have exhibited polycrystalline nature with tetragonal structure and have been covered well on glass substrates. The crystalline and surface properties of the films have improved with increasing annealing temperature. The band gap values have been changed from 3.73 to 3.66 eV depending on the annealing temperature. The refractive index (n), optical static and high frequency dielectric constants (εo, ε∞) values have been calculated as a function of the annealing temperature. The resistivity values of the films have changed between 10−1 – 10−3 Ω cm with annealing temperature and light at room temperature.

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