Optical, electrical and dielectric properties of TiO2–SiO2 films prepared by a cost effective sol–gel process

Titanium dioxide (TiO2) and silicon dioxide (SiO2) thin films and their mixed films were synthesized by the sol–gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO2 and SiO2 respectively. The pure and composite films of TiO2 and SiO2 were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO2 and SiO2 sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO2 films on p-silicon (1 0 0) substrates. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 °C for their possible use in optoelectronic applications.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Pure and composite films of TiO2 and SiO2 were deposited on glass and Si-substrates. ► MOS capacitors were fabricated using TiO2 films on p-silicon (1 0 0) substrates. ► Optical, electrical, dielectric properties have been investigated. ► The studies suggest that it is suitable for use in optoelectronic applications.