Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1240640 | Spectrochimica Acta Part B: Atomic Spectroscopy | 2007 | 4 Pages |
Abstract
During the fabrication process of integrated circuits, dopant atoms segregate to energetically favorable sites at the interface between silicon and silicon dioxide. Because of the continuously shrinking device dimensions, this effect becomes even more significant. To describe it quantitatively within the framework of Technology Computer-Aided Design, the concentration profile at and near the SiO2/Si interface has to be characterized accurately. Total Reflection X-ray Fluorescence Spectrometry (TXRF) with successive etching was used to determine the impurity profile at the SiO2/Si interface with a resolution on the order of a nanometer.
Related Topics
Physical Sciences and Engineering
Chemistry
Analytical Chemistry
Authors
C. Steen, A. Nutsch, P. Pichler, H. Ryssel,