| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1243493 | Talanta | 2010 | 7 Pages |
The porous Cu film was deposited on a Pt/Ti/Si substrate by electrochemical deposition accompanied by hydrogen evolution at very high current densities. CuO films with similar morphologies were obtained by subsequent annealing of the porous copper films. The morphology, composition and structure of the porous Cu and porous CuO were investigated by FE-SEM, EDS and XRD methods. The complete transformation of Cu to CuO after annealing was indicated. The sensing performances of the porous CuO film were evaluated in alkaline solution with the porous CuO film showing a wide linearity range from 1 μM to 2.5 mM with sensitivity of 2.9 mA cm−2 mM−1, and detection limit of 0.14 μM. The sensor showed good selectivity to conventional intermediates such as AA and UA and long term stability.
