Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1249642 | Vibrational Spectroscopy | 2010 | 5 Pages |
Abstract
Boron doped diamond films have been grown adhered to silicon substrates by chemical vapor deposition using boron containing gases. In this work it was shown that it is possible to grow free-standing boron doped CVD diamond films on partially stabilized zirconia substrates using boron powder as the source for doping. Results from Raman spectroscopy confirmed the boron incorporation with concentration up to ∼1020 cm−3. X-ray diffraction and scanning electron microscopy showed that the effect of boron incorporation in the microstructure of the diamond film is negligible. The measurement of the resistivity as a function of temperature confirmed the semiconductor behavior, as expected for p-type diamond.
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Physical Sciences and Engineering
Chemistry
Analytical Chemistry
Authors
Livia Elisabeth Vasconcellos de Siqueira Brandao, Rafael Fernando Pires, Naira Maria Balzaretti,