| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1258857 | Journal of Rare Earths | 2016 | 5 Pages |
Abstract
Tb3+-doped ZnSe and ZnSe/ZnS nanocrystals were synthesized using modified hot-injection method. The observation of the characteristic quantum dots absorption features in a time-gated excitation spectrum was recorded while monitoring Tb3+ emission at 545 nm provided direct evidence for successful incorporation of dopant ions into semiconductor host. Relatively long decay time (∼1.5 ms) of Tb3+ emission indicated that dopant ions were well protected from interaction with surface ligands. Emission properties of core ZnSe:Tb3+ nanocrystals were only slightly modified upon growth of ZnS shell.
Graphical AbstractFigure optionsDownload full-size imageDownload as PowerPoint slide
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
J. Cichos, M. Karbowiak, D. Hreniak, W. Stręk,