Effect of ytterbium inclusion in hafnium oxide on the structural and electrical properties of the high-k gate dielectric

The undoped and Yb-doped HfO2 thin films were deposited on p-type single crystal Si(100) substrates using RF magnetron sputtering method. The structure and electrical properties were investigated as a function of doping concentrations. The results showed that the presence of Yb could stabilize HfO2 in cubic phase. The dielectric constant was enhanced after introducing Yb3+ ions into the HfO2 host. Compared with undoped HfO2 thin film, the Yb-doped HfO2 thin film exhibited a low leakage current. The silicate reaction between rare earth ions and SiO2 layers was used to eliminate interfacial silica and form a stable interface.

XRD patterns of HfO2 thin films with various doping concentrationsFigure optionsDownload full-size imageDownload as PowerPoint slide