| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1260206 | Journal of Rare Earths | 2007 | 5 Pages |
Abstract
La2/3Sr1/3Mn1 - xZnxO3 films (x = 0.05, 0.1, 0.3, and 0.5) were prepared using magnetron sputtering method, and the effect of Zn doping on transport properties of the films was studied. An analysis of X-ray diffraction showed that the main phase of the bulk target was orthorhombic and the films had better epitaxial character. It was found that the films with x =0.05 and x =0.1 exhibited typical insulator-metal transition. No transition of the films with x≥0.3 was observed and the dominant transport was variable-range hopping due to observable secondary phase ZnO. These could be attributed to the Zn doping effect on manganites.
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