| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1260693 | Journal of Rare Earths | 2006 | 4 Pages |
Abstract
Lu3Al5O12 (LuAG) thin films with different Tb3+ concentration were prepared on carefully cleaned (111) silicon wafer by a Pechini process and dip-coating technique. Heat treatment was performed in the temperature range from 800 to 1100 °C. The crystal structure was analyzed by XRD. The results show that LuAG film starts to crystallize at about 900 °C, and the particle size increases with the sintering temperature. Excitation and emission spectra of Tb3+ doped LuAG films were measured. The effects of heat-treatment temperature and doping concentration of Tb3+ on the luminescent properties were also investigated. For a comparison study, Tb3+ -doped LuAG powders were also prepared by the same sol-gel method.
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