| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1262378 | Journal of Rare Earths | 2012 | 4 Pages |
Amorphous La2Hf2O7 thin films were deposited on Si(100) substrate by pulsed laser deposition (PLD) method under different conditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS). When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.
