Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1263654 | Organic Electronics | 2015 | 6 Pages |
•GM imaging technique was applied to rapid and collective inspection of OTFT arrays.•The method enabled spatial mapping of charges accumulated in OTFT arrays.•Dead pixels due to wire disconnections could be easily found from the image.•Response time variation of OTFTs could be distinguished by the transient images.
We report on the application of the gate-modulation (GM) imaging technique in rapid and collective inspection of organic thin-film transistor (OTFT) array operations. The method allows visualizing charge carriers accumulated in the OTFT array by time-translational differential image sensing with the use of a charge coupled device (CCD) sensor. The feature makes it possible to visualize the dead pixels, broken channels, or distributed device performance in the OTFT array. We discuss how to correlate the spectroscopic information of GM signal with the device performance and how to use this technique in the collective inspection of OTFT arrays.
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