Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1263742 | Organic Electronics | 2015 | 6 Pages |
•We have demonstrated a dramatic improvement of β-PFO device.•Use 1% NH4OH to remove chlorine radicals on Cl-ITO surface.•The convenient treatment allows the one-layer-only device for practical application.
Chlorinated-Indium Tin Oxide (Cl-ITO) has been found to have higher work function than the pristine ITO. When used as anode for polymer light-emitting diodes (PLEDs) with deep blue emitting β-phase poly(9,9-di-n-octylfluorene) (β-PFO) as the emitting layer, it allows hole injection without barrier. However, the presence of chlorine free radical on the surface of Cl-ITO leads to an exciton quenching effect. The surface modification on anode by dipping into 1% ammonium (NH4OH) aqueous solution to remove free chlorine radicals on surface can enhance device performance significantly. The single layer device Cl-ITO (treated)/β-PFO/CsF/Al gives the maximum brightness 16773 cd/m2 and maximum luminance efficiency 2.40 cd/A, which are higher than those with untreated Cl-ITO, (2519; 0.27) and CFx treated ITO, (7800; 1.8) and PEDOT:PSS coated ITO, (12884; 1.43). The ease of the present anode treatment allows the one-layer-only device to be a promising candidate for practical application.
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