Low bias negative differential resistance in C60 dimer modulated by gate voltage

By using a combined method of density functional theory and nonequilibrium Green’s function formalism, we investigate the electronic transport properties of a gated C60 dimer molecule sandwiched between two gold electrodes. The results show that the gate voltage can strongly affect the electronic transport properties of the C60 dimer and change it from semiconducting to metallic. Negative differential resistance behaviors are obtained in such systems and can be modulated to occur at much lower bias by the gate voltage. The low bias negative differential resistance is analyzed from the calculated transmission spectra, projected density of states and the spatial distribution of molecular projected self-consistent Hamiltonian orbitals along with the voltage drop. These results provide a theoretical support to the design of low bias negative differential resistance molecular device by using the modulation of gate voltage.

Graphical abstractWe present a systematic study of electronic transport properties of a gated C60 dimer molecule sandwiched between two gold electrodes.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Effect of gate voltage on electronic transport properties of the C60 dimer is studied. ► Gate voltage can change the system from semiconducting to metallic. ► Negative differential resistance behavior can be modulated to occur at much lower bias by the gate voltage.