| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1264013 | Organic Electronics | 2012 | 7 Pages |
A systematical investigation on solvent-vapor annealing in polymer thin film transistors is performed using a thiazolothiazole-bithiazole conjugated polymer as the active layer. Film morphology, packing order and device performance are closely related to polarity and solubility parameter of the annealing solvent and annealing time. The formation of highly ordered and closely connected fibrillar domains is realized by using a solvent with similar solubility parameter and polarity to the conjugated polymer. Field-effect transistors based on pristine polymer films exhibit a highest charge carrier mobility of 0.0067 cm2 V−1 s−1. After solvent vapor annealing with THF for 48 h, the mobility boosts up to 0.075 cm2 V−1 s−1. This correlation between solvent polarity, solubility parameter and film morphology, packing order and mobility provides a useful guideline towards high performance polymer thin film transistors with solvent-vapor annealing method.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Effect of solvent-vapor annealing on polymer thin film transistors is investigated. ► Device performance is closely related to solvent polarity and solubility parameter. ► Solvent annealing with THF leads to one order of magnitude enhancement of mobility.
