Memory stabilities and mechanisms of organic bistable devices with a phase-separated poly(methylmethacrylate)/poly(3-hexylthiophene) hybrid layer

Organic bistable devices (OBDs) with a poly(methylmethacrylate) (PMMA)/poly(3-hexylthiophene) (P3HT) hybrid layer, acting as a charge storage region, formed by using a vertical phase self-separation method were fabricated. The current–voltage curves of the Al/P3HT/PMMA/indium-tin-oxide devices exhibited current bistabilities with a maximum ON/OFF ratio of 1 × 104. The write-read-erase-read sequence results demonstrated the switching characteristics of the OBDs. The cycling endurance number of the ON/OFF switching for the OBD was above 1 × 105. The memory characteristics of the OBDs were attributed to trapping and detrapping processes of electrons into and out of the P3HT/PMMA heterointerfaces.

Graphical abstractFigure showed the retention cycles at a reading voltage of 1 V to confirm the memory stability of the Al/P3HT/PMMA/ITO device. The retention cycles of the OBDs under a stress voltage per time of 1 V per 4 ms are evaluated in the ON and the OFF states. The OBDs fabricated utilizing a P3HT/PMMA hybrid layer formed by using the vertical phase self-separation process maintain the ON and the OFF states without significant degradation until 1 × 105 cycles.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► OBDs formed by using a vertical phase self-separation method were fabricated. ► Current-voltage curves showed current bistabilities with an ON/OFF ratio of 1 × 104. ► Retention cycles were maintained until 1 × 105 cycles without significant degradations. ► Memory mechanisms were dominantly related to trapping and detrapping processes of electrons.