Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1264188 | Organic Electronics | 2010 | 5 Pages |
Abstract
Hybrid organic–inorganic complementary inverters composed of pentacene and amorphous InGaZnO for p- and n-channel thin-film transistors (TFTs) were fabricated on flexible polyethersulfone substrates. The p- and n-channel TFTs showed saturation mobility values of 0.15 and 3.8 cm2/Vs, respectively. We propose a new method to find the switching threshold voltage and the optimum supply voltage of complementary inverters. With this method, we demonstrate hybrid complementary inverters that at a supply voltage of 25 V show a high gain of 130 V/V at a switching threshold voltage of 12.5 V. Operating these inverters at the ideal supply voltage leads to high and balanced noise margins with values of 84% of their theoretical maximum.
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Authors
J.B. Kim, C. Fuentes-Hernandez, S.-J. Kim, S. Choi, B. Kippelen,