OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol–gel reaction

The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol–gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol–gel process and patterned by UV cross-linking below 120 °C. Leakage currents of dielectric layers remained below 10−9 A under operating voltage and dielectric constants were measured to be ∼6.5 at 10 kHz. The field effect mobility and on–off ratio were ∼0.86 cm2/V s and ∼104, respectively. These results demonstrate that sol–gel hybrid systems are suitable for gate dielectrics in OTFTs.