One-pot surface modification of poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

•This study investigates the one-pot surface modification of PEMA gate insulators.•Surface properties of the PEMA gate insulator could be easily modified by adding PMAO to the coating solution.•The device performance of low-voltage DNTT OTFTs can be improved by one-pot surface modification of the gate insulator.

This study investigates the one-pot surface modification of poly(ethylene-alt-maleic anhydride) (PEMA) gate insulators crosslinked with 1,5-naphthalenediamine (1,5-NDA) for enhancing the device performance of low-voltage dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) organic thin-film transistors (OTFTs). Surface properties of the PEMA gate insulator could be easily modified by adding poly(maleic anhydride-alt-1-octadecene) (PMAO) to the coating solution. The surface energy of the gate insulator is strongly correlated with the growth of organic semiconductors and the charge carrier transport at the interface between the semiconductor and gate insulator. The results indicate that the device performance of low-voltage DNTT OTFTs can be improved by one-pot surface modification of the PEMA gate insulator.

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