Integrated all-organic 8 × 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array

•The all-organic 64 bit memory cell array utilizing 1T-1R architecture was demonstrated.•The 64 bit array show precise addressing due to gating of transistors.•The 1T-1R cell array encoded letters based on the standard ASCII character code.

Cross-bar array organic resistive memory devices enable high storage density but suffer from the issue of undesired cross-talk. A one transistor-one resistor (1T-1R) architecture offers a potential solution to this issue. However, all organic based 1T-1R architecture has not yet been demonstrated due to the difficulties in fabrication and operational voltage range mismatching between organic resistive memory and organic transistor. Herein, we demonstrate the first all-organic based 64 bit memory cell array utilizing 1T-1R architecture. The transfer and output curves of transistors in the 1T-1R cell array are governed by the memory cell and the 64 bit array show precise addressing due to gating of transistors. Moreover, the 1T-1R cell array encoded letters based on the standard ASCII character code.

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