| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 1264293 | Organic Electronics | 2010 | 5 Pages | 
Abstract
												The improvement of current injection efficiency in organic light emitting diodes is demonstrated with incorporation of SubPc-doped NPB as hole injection layers. The photoemission spectra illustrate the presence of gap states and the occurrence of axial reaction on SubPc with NPB. Quantum chemistry calculation provides simulated valence-band spectra indicating that the formation of gap states is due to the HOMOs of new complexes created from the reaction of SubPc and NPB, which facilitate the hole injection at the anode interfaces.
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											Authors
												Yu-Hung Chen, Yu-Jen Chang, Guan-Ru Lee, Jung-Hung Chang, I-Wen Wu, Jheng-Hao Fang, Shu-Han Hsu, Shun-Wei Liu, Chih-I Wu, Tun-Wen Pi, 
											