Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1264360 | Organic Electronics | 2009 | 4 Pages |
Abstract
A novel encapsulation structure to protect organic thin film transistors against oxygen and moisture contaminations is presented. The sealing architecture is comprised of three-layers: aluminum oxide deposited by means of Atomic Layer Deposition is the actual capping layer, while cross-linked poly-vinylphenol and poly-vinylphenol prevent the contamination/damage of the underlying organic semiconductor during the oxide growth. The process has negligible impact on device mobility but it enables poly-3-hexylthiophene based transistors to operate with an on/off ratio in excess of 103 even after 100 days of continuous ambient air exposure.
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Chemistry
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Authors
Luca Fumagalli, Maddalena Binda, Inma Suarez Lopez, Dario Natali, Marco Sampietro, Sandro Ferrari, Luca Lamagna, Marco Fanciulli,