Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1264401 | Organic Electronics | 2007 | 6 Pages |
Abstract
We report the electrical characterization of hybrid permeable-base transistors with tris(8-hydroxyquinoline) aluminum as emitter layer. These transistors were constructed presenting an Al/n-Si/Au/Alq3/V2O5/Al structure. We investigate the influence of the V2O5 layer thickness and demonstrate that these devices present high common-base and common-emitter current gain, and can be operated at very low driving voltages, lower than 1 V, in both, common-base and common-emitter modes.
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Authors
Mingdong Yi, Shunyang Yu, Chengang Feng, Tong Zhang, Dongge Ma, M.S. Meruvia, Ivo A. Hümmelgen,