Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1264482 | Organic Electronics | 2007 | 6 Pages |
Abstract
Fourier transform infrared and photoluminescence spectroscopy provide strong evidence that post-deposition hydrogen doping of polycrystalline zinc oxide (ZnO) thin films improves the resistivity by increasing hydrogen-related shallow donors and hydrogen passivation of native defects. Improvement of the electrical stability and UV emission confirm that post-deposition hydrogen doping is a promising method to achieve high quality ZnO thin films for the use as transparent electrodes and/or UV light emitters in thin-film-based optoelectronic devices.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Seung Yeop Myong, Koeng Su Lim,