| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1264627 | Organic Electronics | 2012 | 6 Pages |
A hygroscopic insulator field-effect transistor (HIFET) ring oscillator with three inverters was built and tested under ambient laboratory conditions. An operating voltage of −2 V was used, yielding a peak-to-peak output voltage of 1.1 V and an oscillation frequency of 28 mHz. For Spice (simulation program with integrated circuit emphasis) simulation of the HIFET circuits the measured HIFET output characteristics were fitted to a DC (direct current) model and additional measurements were made to find the magnitude of the capacitive and resistive elements in the HIFET gate structure. The results indicated that HIFETs have a good potential for use in amplifier and sensor circuit applications where high operation speed is not crucial.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► An organic HIFET ring oscillator worked with low operating voltages in ambient air. ► A simulation model for HIFET was developed based on electrical measurements. ► Capacitances related to gate structure do not explain the slow operation of HIFETs. ► The operational slowness is related to the electrochemical doping process.
