Charge transport and density of trap states in balanced high mobility ambipolar organic thin-film transistors

We report on charge transport and density of trap states (trap DOS) in ambipolar diketopyrrolopyrrole–benzothiadiazole copolymer thin-film transistors. This semiconductor possesses high electron and hole field-effect mobilities of up to 0.6 cm2/V-s. Temperature and gate-bias dependent field-effect mobility measurements are employed to extract the activation energies and trap DOS to understand its unique high mobility balanced ambipolar charge transport properties. The symmetry between the electron and hole transport characteristics, parameters and activation energies is remarkable. We believe that our work is the first charge transport study of an ambipolar organic/polymer based field-effect transistor with room temperature mobility higher than 0.1 cm2/V-s in both electrons and holes.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We report on charge transport of high mobility ambipolar transistors. ► The electron and hole mobilities both approach 0.6 cm2/V-s. ► The electron and hole transport properties including mobility, activation energy and trap distributions are very similar.