| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1264852 | Organic Electronics | 2010 | 4 Pages |
Abstract
An ion-sensitive organic field-effect transistor (ISOFET) has been fabricated by using poly(3-hexylthiophene) as the semiconductor and polymethylmethacrylate as the gate insulator. With the gate metallization replaced by an Ag/AgCl reference electrode, and following suitable encapsulation, the ISOFETs exhibit transistor behavior in an aqueous environment. Moreover, the devices are shown to respond to changes in pH of the solution. A significant increase in the sensitivity of the ISOFET to H+ ions was found by depositing a Langmuir–Blodgett film of arachidic acid on top of the gate insulator.
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Authors
Supachai Ritjareonwattu, Youngjun Yun, Christopher Pearson, Michael C. Petty,