Statistical characterization of the memory effect in polyfluorene based non-volatile resistive memory devices

Non-volatile resistive memory devices based on a polyfluorene layer sandwiched between two electrodes were studied. The working mechanism was ascribed to the formation of metallic filaments. We characterized the switching probability of multiple devices and the consistency of the switching capability within the same device. Together with cross-section scanning electron microscope images and finite element simulation of electric field distributions, a model was developed to describe the resistive switching phenomenon and explain the variations between devices as well as between switching cycles.