High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

C60 and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C60 thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm2 V−1 s−1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm2 V−1 s−1. The μ values recorded for C60 and picene thin film FETs are comparable to those for C60 and picene thin film FETs with Au electrodes.