Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1265093 | Organic Electronics | 2009 | 5 Pages |
Abstract
C60 and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C60 thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm2 V−1 s−1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm2 V−1 s−1. The μ values recorded for C60 and picene thin film FETs are comparable to those for C60 and picene thin film FETs with Au electrodes.
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Authors
Yumiko Kaji, Ryoji Mitsuhashi, Xuesong Lee, Hideki Okamoto, Takashi Kambe, Naoshi Ikeda, Akihiko Fujiwara, Minoru Yamaji, Kenji Omote, Yoshihiro Kubozono,