Ideal host and guest system in phosphorescent OLEDs

Ideal host-guest system for emission in phosphorescent OLEDs with only 1% guest doping condition for efficient energy transfer have been demonstrated in the present investigation. Using a narrow band-gap fluorescent host material, bis(10-hydroxybenzo[h] quinolinato)beryllium complex (Bebq2), and red dopant bis(2-phenylquinoline)(acetylacetonate)iridium (Ir(phq)2acac), highly efficient red phosphorescent OLEDs (PHOLEDs) exhibiting excellent energy transfer characteristics with a doping concentration of 1% were developed. Fabricated PHOLEDs show a driving voltage of 3.7 V, maximum current and power efficiencies of 26.53 cd/A and 29.58 lm/W, and a maximum external quantum efficiency of 21%. Minimized electron or hole trapping at the phosphorescent guest molecules and efficient Förster and Dexter energy transfers from the Bebq2 host singlet and triplet states to the emitting triplet of Ir(phq)2acac guest appear to be the key mechanism for ideal phosphorescence emission.