| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1265295 | Organic Electronics | 2011 | 6 Pages |
Abstract
⺠We present that ZnO-SAM is an efficient electron injection and hole blocking layer. ⺠The high EL efficiency of inverted device is similar to that of conventional device. ⺠Detailed emissive mechanism of inverted device was discussed with different project. ⺠Effect of annealing ZnO was analyzed with current-capacitance-voltage comparison.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Chen-Yan Li, Ying-Nien Chou, Jia-Rong Syu, Sung-Nien Hsieh, Tzung-Da Tsai, Chen-Hao Wu, Tzung-Fang Guo, Wei-Chou Hsu, Yao-Jane Hsu, Ten-Chin Wen,