Organic/oxide hybrid complementary thin-film transistor inverter in vertical stack for logic, photo-gating, and ferroelectric memory operation

We demonstrated a vertically stacked complementary thin-film transistor inverter (VS-CTFT inverter) for the purpose of maximizing potentials beyond logic applications by including photo-gating and ferroelectric memory operation with properly selected organic and oxide materials. For our VS-CTFT inverter for logic and photo-gating, we used a thermally-evaporated p-channel pentacene layer, sputter-deposited n-channel GaZnSn-based oxide (GZTO), and atomic layer deposited (ALD) Al2O3 dielectric. As a more advanced hybrid approach, we also adopted a ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF–TrFE)] layer for a CTFT nonvolatile memory inverter with a pentacene memory TFT which is vertically stacked on a top-gate GZTO TFT. Our VS-CTFT inverter nicely displays effective photo- and electrical-gating with a high voltage gain, dynamically operating in the low-voltage regime of 3, 5, and 8 V. The ferroelectric memory inverter as an ultimate hybrid device form demonstrates promising retention properties as triggered by ±20 V gate pulses.

Graphical abstractOrganic/oxide hybrid complementary thin-film transistor inverter was designed and constructed in vertically-stacked form for logic, photo-gating, and ferroelectric memory operations on glass. Our vertical inverter devices demonstrate promising voltage gain and dynamic photo-gating along with short term nonvolatile memory effects.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Vertically stacked complementary thin-film transistor inverter (VS-CTFT inverter).► Organic/inorganic hybrid device structure. ► Photo-gating applications of VS-CTFT inverter under blue light pulse. ► Nonvolatile memory function of VS-CTFT with ferroelectric polymer.