| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1265542 | Organic Electronics | 2008 | 6 Pages |
Contact resistance between molybdenum (Mo) electrode and pentacene was studied with transmission line method (TLM). The Mo electrodes were annealed at 200 °C, 400 °C, 600 °C and 800 °C for 1 h and pentacene layer of 300 Å thickness was vacuum deposited on patterned Mo to form Mo–pentacene contact. Current–voltage measurement for Mo–pentacene contact showed linear relationship and it was confirmed that ohmic contact was formed. XRD and AFM measurements showed that Mo could be crystallized at annealing temperatures above 600 °C. 800 °C annealed Mo showed larger grains and work function was increased from 4.60 eV to 4.80 eV due to the decrease in defect density. The contact resistance was reduced down to 11.2 MΩ cm from 37.8 MΩ cm of as-deposited Mo. Also the pentacene film deposited on annealed Mo was denser with better crystallinity. Bottom contact organic field-effect transistor made with 800 °C annealed Mo showed better performance than as deposited Mo.
